 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AUIRF3808 hexfet ? power mosfet www.irf.com 1 pd - 97697a g d s gate drain source to-220ab AUIRF3808 s d g d s d g automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. features ! " " # $ % $# " #" &' $ ( )% !" # *# +, description !" # $ % & '% ' % # !" ( ) ' % & hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 75v r ds(on) typ. 5.9m ? max 7.0m ? i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 0.45 r ? cs case-to-sink, flat, greased surface 0.50 ??? c/w r ? ja junction-to-ambient ??? 62 -55 to + 175 300 10 lbf in (1.1n m) 330 2.2 20 max. 140 97 550 5.5 see fig. 12a, 12b, 15, 16 430 82 AUIRF3808 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). starting t j = 25c, l = 0.130mh r g = 25 ? , i as = 82a. (see figure 12). i sd ? 82a, di/dt ? 310a/ s, v dd ?? v (br)dss , t j ? 175c pulse width ? 400 s; duty cycle ? 2%. s d g c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. r ? ? is measured at t j of approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 75 ??? ??? v ? ? ? a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 150 220 q gs gate-to-source charge ??? 31 47 nc q gd gate-to-drain ("miller") charge ??? 50 76 t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 140 ??? t d(off) turn-off delay time ??? 68 ??? ns t f fall time ??? 120 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 5310 ??? c oss output capacitance ??? 890 ??? pf c rss reverse transfer capacitance ??? 130 ??? c oss output capacitance ??? 6010 ??? c oss output capacitance ??? 570 ??? c oss eff. effective output capacitance ??? 1140 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 140 (body diode) a i sm pulsed source current ??? ??? 550 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 93 140 ns q rr reverse recovery charge ??? 340 510 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 25v conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 82a i d = 82a v ds = 60v v gs = 20v v gs = -20v v gs = 10v v ds = v gs , i d = 250 a v ds = 75v, v gs = 0v v ds = 60v, v gs = 0v, t j = 150c mosfet symbol v dd = 38v i d = 82a r g = 2.5 ? conditions v gs = 10v v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 82a ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 60v t j = 25c, i f = 82a di/dt = 100a/ s t j = 25c, i s = 82a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 0v, v ds = 60v, ? = 1.0mhz AUIRF3808 www.irf.com 3 ! " #$%&%' ' ( ) )* ) qualification information ? to-220 n/a rohs compliant yes esd machine model class m4 (+/- 800v) ??? aec-q101-002 human body model class h2 (+/- 4000v) ??? aec-q101-001 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level AUIRF3808 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 137a 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 15v 20 s pulse width AUIRF3808 www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 40 80 120 160 0 2 4 6 8 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 82a v = 15v ds v = 37v ds v = 60v ds AUIRF3808 6 www.irf.com fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f ???? ??????? + - fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) AUIRF3808 www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - %&+ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 14. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 25 50 75 100 125 150 0 160 320 480 640 800 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 34a 58a 82a AUIRF3808 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 140a AUIRF3808 www.irf.com 9 for n-channel hexfet ? power mosfets ??? ??? ??? ??? ! " # " ????? #$% ???? & ' ???? #$#() " * p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - , +*#)# , AUIRF3808 10 www.irf.com * + , - . / ) / # 0 # 121 3323 434 "2" *5/6 AUIRF3808 www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRF3808 to-220 tube 50 AUIRF3808 AUIRF3808 12 www.irf.com - ( . / 0 ' % +./, ( & ' 1-2 ) 3 $ & '4 ./5 ( & ./ ' ./5 & $ $ ) ./ & ) ' $ & ./ ' & 0 ' ./ & # ( $ & / ./ ./ '( ' ' & / ' & ./ ' ' & . ' '4 & / ./ ' ' ./ ) ./ ' & ./ ' ' & ./ # ' ./ 4 & 6 ./ # 6 . / ' ' ) ' 4 # ./ & " ' * 7 +*7, - * * *7 $ ' & 6 ( ./ ' *7 % $ 6 5 ( ' $ & ./ ./ ' ./ ."3 89:;: $ ' ' 1-2& 6 ( % ./ ' ' $ & 6 5 7 " # $ , % - ./%) ."*0 12 345 611!7 |
Price & Availability of AUIRF3808
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |